"Novel Back Gate Doping Ultra Low Retention Power 22nm FDSOl SRAM for IOT ..."

Mingcheng Chang et al. (2018)

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DOI: 10.1109/ESSDERC.2018.8486897

access: closed

type: Conference or Workshop Paper

metadata version: 2018-11-13

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Mingcheng Chang, Nigel Chan, Vivek Joshi, Sandra Hecker, Udo Ziller, Petra Poth, Alban Zaka, Tom Herrmann, Seunghwan Seo, Hongsik Yoon, Xin Zou, Zhen Xu, Hema Ramamurthy, Torsten Klick, Gabriele Congedo, Youmean Lee, Elke Erben, Gerd Zschaetzsch, Juergen Faul, Jon Kluth, Joerg Schmid, Ralf Van Bentum, Chad Weintraub:
Novel Back Gate Doping Ultra Low Retention Power 22nm FDSOl SRAM for IOT Application. ESSDERC 2018: 78-81

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