"600 V, low-leakage AlGaN/GaN MIS-HEMT on bulk GaN substrates."

Muhammad Alshahed et al. (2016)

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DOI: 10.1109/ESSDERC.2016.7599621

access: closed

type: Conference or Workshop Paper

metadata version: 2019-05-01

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Muhammad Alshahed, Mohammed Alomari, Christine Harendt, Joachim N. Burghartz, C. Wachter, T. Bergunde, S. Lutgen:
600 V, low-leakage AlGaN/GaN MIS-HEMT on bulk GaN substrates. ESSDERC 2016: 202-205

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