"Impact of channel thickness scaling on the performance of GaN-on-Si RF ..."

AliReza Alian et al. (2022)

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DOI: 10.1109/ESSDERC55479.2022.9947147

access: closed

type: Conference or Workshop Paper

metadata version: 2024-12-23

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AliReza Alian, Raúl Rodríguez, Sachin Yadav, Uthayasankaran Peralagu, Arturo Sibaja Hernandez, Vamsi Putcha, Ming Zhao, Rana Y. El Kashlan, Bjorn Vermeersch, Hao Yu, Erik Bury, Ahmad Khaled, Nadine Collaert, Bertrand Parvais:
Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer. ESSDERC 2022: 384-387

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