"Impact of Channel Length on Characteristics of 600V 4H-SiC ..."

Aditi Agarwal, Kijeong Han, B. Jayant Baliga (2019)

> Home

Details and statistics

DOI: 10.1109/ESSDERC.2019.8901813

access: closed

type: Conference or Workshop Paper

metadata version: 2019-11-28

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/essderc/AgarwalHB19
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/essderc/AgarwalHB19
Aditi Agarwal, Kijeong Han, B. Jayant Baliga:
Impact of Channel Length on Characteristics of 600V 4H-SiC Inversion-channel Planar MOSFETs. ESSDERC 2019: 78-81

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.