"A 65nm RRAM Compute-in-Memory Macro for Genome Sequencing Alignment."

Fan Zhang et al. (2023)

> Home

Details and statistics

DOI: 10.1109/ESSCIRC59616.2023.10268783

access: closed

type: Conference or Workshop Paper

metadata version: 2024-08-04

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/esscirc/ZhangHYLCCSF23
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/esscirc/ZhangHYLCCSF23
Fan Zhang, Wangxin He, Injune Yeo, Maximilian Liehr, Nathaniel C. Cady, Yu Cao, Jae-Sun Seo, Deliang Fan:
A 65nm RRAM Compute-in-Memory Macro for Genome Sequencing Alignment. ESSCIRC 2023: 117-120

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.