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"High-K Gate Dielectric GaN MOS-HEMTs with Regrown n+ InGaN Source/Drain ..."
Han Wui Then et al. (2019)
- Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Sanaz Gardner, Seung-Hoon Sung, Paul Fischer:
High-K Gate Dielectric GaN MOS-HEMTs with Regrown n+ InGaN Source/Drain (Invited Paper). DRC 2019: 39-40
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