"Very High Parallel-Plane Surface Electric Field of 4.3 MV/cm in Ga2O3 ..."

Devansh Saraswat et al. (2020)

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DOI: 10.1109/DRC50226.2020.9135177

access: closed

type: Conference or Workshop Paper

metadata version: 2020-07-27

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Devansh Saraswat, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing:
Very High Parallel-Plane Surface Electric Field of 4.3 MV/cm in Ga2O3 Schottky Barrier Diodes with PtOx Contacts. DRC 2020: 1-2

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