"2.3 kV GaN Super-Heterojunction FET for Cryogenic Power Switching."

Mansura Sadek et al. (2024)

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DOI: 10.1109/DRC61706.2024.10605293

access: closed

type: Conference or Workshop Paper

metadata version: 2024-08-16

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Mansura Sadek, Jesse T. Kemmerling, Ajay Kumar Visvkarma, Rian Guan, Yixin Xiong, Jianan Song, James Spencer Lundh, Karl D. Hobart, Travis J. Anderson, Rongming Chu:
2.3 kV GaN Super-Heterojunction FET for Cryogenic Power Switching. DRC 2024: 1-2

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