"Characteristics of P-channel GaN MOSFET up to 300 °C."

Sang Woo Han, Jianan Song, Rongming Chu (2019)

> Home

Details and statistics

DOI: 10.1109/DRC46940.2019.9046423

access: closed

type: Conference or Workshop Paper

metadata version: 2020-04-03

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/drc/HanSC19
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/drc/HanSC19
Sang Woo Han, Jianan Song, Rongming Chu:
Characteristics of P-channel GaN MOSFET up to 300 °C. DRC 2019: 147-148

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.