"$W_{e}=100\mathrm{nm}$ InP/lnGaAs DHBT with Self-aligned MOCVD Regrown ..."

Yihao Fang, Hsin-Ying Tseng, Mark J. W. Rodwell (2019)

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DOI: 10.1109/DRC46940.2019.9046400

access: closed

type: Conference or Workshop Paper

metadata version: 2020-04-03

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Yihao Fang, Hsin-Ying Tseng, Mark J. W. Rodwell:
$W_{e}=100\mathrm{nm}$ InP/lnGaAs DHBT with Self-aligned MOCVD Regrown p-GaAs Extrinsic Base Exhibiting $1\Omega-\mu\mathrm{m}^{2}$ Base Contact Resistivity. DRC 2019: 179-180

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