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E. A. Douglas et al. (2018)
- E. A. Douglas, B. A. Klein, A. A. Allerman, Albert G. Baca, T. R. Fortune, A. M. Armstrong:
Enhancement-mode Al045Ga0.55N/Al0.3Ga0.7N High Electron Mobility Transistor with p-Al0.3Ga0.7N Gate. DRC 2018: 1-2
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