"Impact of Gate Oxide Thickness on Electrical Characteristics of 1200 V ..."

Aditi Agarwal, Kijeong Han, B. Jayant Baliga (2019)

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DOI: 10.1109/DRC46940.2019.9046447

access: closed

type: Conference or Workshop Paper

metadata version: 2020-04-03

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Aditi Agarwal, Kijeong Han, B. Jayant Baliga:
Impact of Gate Oxide Thickness on Electrical Characteristics of 1200 V 4H-SiC Planar-Gate Power MOSFETs. DRC 2019: 237-238

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