"Engineering UGR-VCMTCF RRAM Model for Adjusting to TiN/Ti/HfO2/W Devices."

V. Mahboubi et al. (2024)

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DOI: 10.1109/DCIS62603.2024.10769120

access: closed

type: Conference or Workshop Paper

metadata version: 2025-01-13

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V. Mahboubi, Á. Gómez, Antonio Calomarde, Daniel Arumí, R. Rodríguez, Salvador Manich:
Engineering UGR-VCMTCF RRAM Model for Adjusting to TiN/Ti/HfO2/W Devices. DCIS 2024: 1-6

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