"A smartphone SP10T T/R switch in 180-nm SOI CMOS with 8kV+ ESD protection ..."

X. Shawn Wang et al. (2013)

> Home

Details and statistics

DOI: 10.1109/CICC.2013.6658474

access: closed

type: Conference or Workshop Paper

metadata version: 2020-12-21

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/cicc/WangWLWMDSWYWJ13
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/cicc/WangWLWMDSWYWJ13
X. Shawn Wang, Xin Wang, Fei Lu, Li Wang, Rui Ma, Zongyu Dong, Li Sun, Albert Z. Wang, C. Patrick Yue, Dawn Wang, Alvin J. Joseph:
A smartphone SP10T T/R switch in 180-nm SOI CMOS with 8kV+ ESD protection by co-design. CICC 2013: 1-4

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.