"Modeling well edge proximity effect on highly-scaled MOSFETs."

Yi-Ming Sheu et al. (2005)

> Home

Details and statistics

DOI: 10.1109/CICC.2005.1568798

access: closed

type: Conference or Workshop Paper

metadata version: 2021-01-14

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/cicc/SheuSYCWCL05
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/cicc/SheuSYCWCL05
Yi-Ming Sheu, Ke-Wei Su, Sheng-Jier Yang, Hsien-Te Chen, Chih-Chiang Wang, Ming-Jer Chen, S. Liu:
Modeling well edge proximity effect on highly-scaled MOSFETs. CICC 2005: 831-834

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.