"A capacitorless twin-transistor random access memory (TTRAM) on SOI."

Fukashi Morishita et al. (2005)

> Home

Details and statistics

DOI: 10.1109/CICC.2005.1568699

access: closed

type: Conference or Workshop Paper

metadata version: 2018-11-14

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/cicc/MorishitaNGOIMD05
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/cicc/MorishitaNGOIMD05
Fukashi Morishita, Hideyuki Noda, Takayuki Gyohten, Mako Okamoto, Takashi Ipposhi, Shigeto Maegawa, Katsumi Dosaka, Kazutami Arimoto:
A capacitorless twin-transistor random access memory (TTRAM) on SOI. CICC 2005: 435-438

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.