"Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax ..."

Uppili S. Raghunathan et al. (2022)

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DOI: 10.1109/BCICTS53451.2022.10051761

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type: Conference or Workshop Paper

metadata version: 2024-11-28

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Uppili S. Raghunathan, Saurabh Sirohi, Vaibhav Ruparelia, Prateek Kumar Sharma, Dimitris P. Ioannou, Vibhor Jain, H. K. Kakara, S. Gedela, Venkat Vanukuru, P. Dongmo, C. Luce, R. Hazbun, R. Krishnasamy, J. Hwang, M. Levy, Kristin Welch, S. Liu, B. Cucci, S. Cole, J. Kantarovsky, A. Vallett, Ian McCallum-Cook, M. Yu, R. Phelps, Adam W. DiVergilio, A. Sturm, M. Peters, S. Johnson, R. Rassel, M. Lagerquist, M. Kerbaugh, K. Newton, John J. Pekarik, Qidi Liu:
Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz. BCICTS 2022: 232-235

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