"Comparison of decoupling resistors and capacitors for increasing the ..."

Zhong-Shan Zheng et al. (2015)

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DOI: 10.1109/ASICON.2015.7517078

access: closed

type: Conference or Workshop Paper

metadata version: 2019-10-19

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Zhong-Shan Zheng, Zhen-Tao Li, Ning Qiao, Kai Zhao, Fang Yu, Jia-Jun Luo:
Comparison of decoupling resistors and capacitors for increasing the single event upset resistance of SRAM cells. ASICON 2015: 1-3

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