"Quantum mechanical effects on the threshold voltage of the evenly doped ..."

Guanghui Mei et al. (2011)

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DOI: 10.1109/ASICON.2011.6157265

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-25

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Guanghui Mei, Peicheng Li, Guangxi Hu, Ran Liu, Tingao Tang:
Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs. ASICON 2011: 555-557

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