"Conduction mechanism of self-rectifying n⁺Si-HfO2-Ni RRAM."

D. Y. Lu et al. (2013)

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DOI: 10.1109/ASICON.2013.6811967

access: closed

type: Conference or Workshop Paper

metadata version: 2022-11-15

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D. Y. Lu, X. A. Tran, H. Y. Yu, D. M. Huang, Yung-Yang Lin, S. J. Ding, P. F. Wang, Ming-Fu Li:
Conduction mechanism of self-rectifying n⁺Si-HfO2-Ni RRAM. ASICON 2013: 1-4

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