"A HfO2 Ferroelectric Capacitor based 10T2C High Reliability Non-Volatile ..."

Jing Li et al. (2021)

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DOI: 10.1109/ASICON52560.2021.9620291

access: closed

type: Conference or Workshop Paper

metadata version: 2021-12-06

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Jing Li, Yulin Zhao, Bo Peng, Xuanzhi Liu, Qiao Hu, Sheng Dai, Jianguo Yang, Yuejun Zhang:
A HfO2 Ferroelectric Capacitor based 10T2C High Reliability Non-Volatile SRAM for Low Power IoT Applications. ASICON 2021: 1-4

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