"Gate oxide enhancement for whole chip ESD design between different power ..."

Hongwei Li, Guang Chen, Huijuan Cheng (2013)

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DOI: 10.1109/ASICON.2013.6811959

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-25

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Hongwei Li, Guang Chen, Huijuan Cheng:
Gate oxide enhancement for whole chip ESD design between different power domains. ASICON 2013: 1-4

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