"An empirical model for static I-V characteristics of double gate tunneling ..."

D. M. Huang et al. (2013)

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DOI: 10.1109/ASICON.2013.6811948

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-25

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D. M. Huang, C. J. Yao, D. H. Shi, M. F. Li:
An empirical model for static I-V characteristics of double gate tunneling field effect transistor. ASICON 2013: 1-4

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