"Stress management strategy to limit die curvature during silicon ..."

Benjamin Vianne et al. (2015)

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DOI: 10.1109/3DIC.2015.7334622

access: closed

type: Conference or Workshop Paper

metadata version: 2019-07-16

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Benjamin Vianne, Alexis Farcy, Vincent Fiori, Cédrick Chappaz, Norbert Chevrier, G. Lobascio, Pascal Chausse, F. Ponthenier, A. Ruckly, Stephanie Escoubas, Olivier Thomas:
Stress management strategy to limit die curvature during silicon interposer integration. 3DIC 2015: TS11.4.1-TS11.4.7

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