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A. F. Shulekin

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Journal Articles

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2006
[j4]
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  - journals/mj/VexlerHGTKMSG06
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  - https://dblp.org/rec/journals/mj/VexlerHGTKMSG06
M. I. Vexler, A. El Hdiy, D. Grgec, S. E. Tyaginov, R. Khlil, Bernd Meinerzhagen, A. F. Shulekin, I. V. Grekhov:
Tunnel charge transport within silicon in reversely-biased MOS tunnel structures. Microelectron. J. 37(2): 114-120 (2006)
[j3]
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S. E. Tyaginov, M. I. Vexler, A. F. Shulekin, I. V. Grekhov:
The post-damage behavior of a MOS tunnel emitter transistor. Microelectron. Reliab. 46(7): 1035-1041 (2006)
2004
[j2]
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R. Khlil, A. El Hdiy, A. F. Shulekin, S. E. Tyaginov, M. I. Vexler:
Soft breakdown of MOS tunnel diodes with a spatially non-uniform oxide thickness. Microelectron. Reliab. 44(3): 543-546 (2004)
2001
[j1]
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N. Asli, M. I. Vexler, A. F. Shulekin, P. Douglas Yoder, I. V. Grekhov, Peter Seegebrecht:
Threshold energies in the light emission characteristics of silicon MOS tunnel diodes. Microelectron. Reliab. 41(7): 1071-1076 (2001)

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