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ORCIDAbdul Manaf Hashim
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2020 – today
- 2020
[j6]Nik Noor Nabilah Md Ibrahim, Abdul Manaf Hashim:
Fabrication of Si Micropore and Graphene Nanohole Structures by Focused Ion Beam. Sensors 20(6): 1572 (2020)
2010 – 2019
- 2014
- [j5]Farahiyah Mustafa
, Abdul Manaf Hashim:
RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System. Sensors 14(2): 3493-3505 (2014) - 2011
- [j4]Mastura Shafinaz Zainal Abidin, Abdul Manaf Hashim, Maneea Eizadi Sharifabad, Shaharin Fadzli Abd Rahman, Taizoh Sadoh:
Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure. Sensors 11(3): 3067-3077 (2011) - [j3]Abdul Manaf Hashim, Farahiyah Mustafa, Shaharin Fadzli Abd Rahman, Abdul Rahim Abdul Rahman:
Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications. Sensors 11(8): 8127-8142 (2011)
2000 – 2009
- 2008
- [c4]Mazuina Mohamad, Fong Yee Meng, Abdul Manaf Hashim:
The Sensing Performance of Undoped-AlGaN/GaN/Sapphire HEMT Hydrogen Gas Sensor. Asia International Conference on Modelling and Simulation 2008: 985-986 - [c3]Norfarariyanti Bte Parimon, Siti Suhaila Bte Mohd Yusof, Abdul Manaf Bin Hashim:
Modeling and Characterization of Schottky Diode on AlGaAs/GaAs HEMT Structure for Rectenna Device. Asia International Conference on Modelling and Simulation 2008: 987-989 - [c2]Zon Fazlila Mohd Ahir, Ahmad Zarif Zulkifli, Abdul Manaf Hashim:
Modeling and Characterization of Capacitively Coupled Interdigital-Gated HEMT Plasma Device for Terahertz Wave Amplification. Asia International Conference on Modelling and Simulation 2008: 990-993 - [c1]Farahiyah Mustafa, Nurul Izni Rusli, Abdul Manaf Hashim:
Design and Characterization of Planar Antennas on the Semi-Insulated GaAs for Rectenna Devices. Asia International Conference on Modelling and Simulation 2008: 994-997 - 2007
- [j2]Abdul Manaf Hashim, Seiya Kasai, Tamotsu Hashizume, Hideki Hasegawa:
Integration of interdigital-gated plasma wave device for proximity communication system application. Microelectron. J. 38(12): 1263-1267 (2007) - [j1]Abdul Manaf Hashim, Seiya Kasai, Kouichi Iizuka, Tamotsu Hashizume, Hideki Hasegawa:
Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier. Microelectron. J. 38(12): 1268-1272 (2007)
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