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Toshihiko Yoshimasu
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2020 – today
- 2023
- [j15]Tsuyoshi Sugiura, Toshihiko Yoshimasu:
Ka-Band Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor and Two-Step Adaptive Bias Circuit in 45-nm SOI CMOS. IEICE Trans. Electron. 106(7): 382-390 (2023) - 2022
- [j14]Mengchu Fang, Toshihiko Yoshimasu:
An Ultra-Low-Power Octave-Tuning VCO IC With a Single Analog Voltage-Controlled Novel Varactor. IEEE Trans. Circuits Syst. I Regul. Pap. 69(12): 4751-4760 (2022) - 2021
- [j13]Toshihiko Yoshimasu, Mengchu Fang, Tsuyoshi Sugiura:
A 26-GHz-Band High Back-Off Efficiency Stacked-FET Power Amplifier IC with Adaptively Controlled Bias and Load Circuits in 45-nm CMOS SOI. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. 104-A(2): 477-483 (2021) - 2020
- [j12]Cuilin Chen, Tsuyoshi Sugiura, Toshihiko Yoshimasu:
A 28-GHz-Band Highly Linear Stacked-FET Power Amplifier IC with High Back-Off PAE in 56-nm SOI CMOS. IEICE Trans. Electron. 103-C(4): 153-160 (2020) - [j11]Xiao Xu, Tsuyoshi Sugiura, Toshihiko Yoshimasu:
0.3 V 15-GHz Band VCO ICs with Novel Transformer-Based Harmonic Tuned Tanks in 45-nm SOI CMOS. IEICE Trans. Electron. 103-C(10): 417-425 (2020)
2010 – 2019
- 2019
- [j10]Xiao Xu, Tsuyoshi Sugiura, Toshihiko Yoshimasu:
Ultra-Low Voltage 15-GHz Band Best FoM <-190 dBc/Hz LC-VCO ICs with Novel Harmonic Tuned LC Tank in 45-nm SOI CMOS. IEICE Trans. Electron. 102-C(10): 673-681 (2019) - [j9]Tsuyoshi Sugiura, Satoshi Furuta, Tadamasa Murakami, Koki Tanji, Norihisa Otani, Toshihiko Yoshimasu:
High Efficiency Class-E and Compact Doherty Power Amplifiers with Novel Harmonics Termination for Handset Applications. IEICE Trans. Electron. 102-C(10): 699-706 (2019) - [c4]Cuilin Chen, Tsuyoshi Sugiura, Toshihiko Yoshimasu:
A 28-GHz-band Stacked FET Linear Power Amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS. RWS 2019: 1-3 - 2015
- [j8]Xin Yang, Tsuyoshi Sugiura, Norihisa Otani, Tadamasa Murakami, Eiichiro Otobe, Toshihiko Yoshimasu:
A 5-GHz Band WLAN SiGe HBT Power Amplifier IC with Novel Adaptive-Linearizing CMOS Bias Circuit. IEICE Trans. Electron. 98-C(7): 651-658 (2015) - 2014
- [c3]Kensuke Nakajima, Akihiro Maruyama, Masato Kohtani, Tsuyoshi Sugiura, Eiichiro Otobe, Jaejin Lee, Shinhee Cho, Kyusub Kwak, Jeongseok Lee, Toshihiko Yoshimasu, Minoru Fujishima:
23Gbps 9.4pJ/bit 80/100GHz band CMOS transceiver with on-board antenna for short-range communication. A-SSCC 2014: 173-176 - [c2]Taufiq Alif Kurniawan, Xin Yang, Xiao Xu, Zheng Sun, Toshihiko Yoshimasu:
A 2.5-GHz band low-voltage high efficiency class-E power amplifier IC with body effect. ISIC 2014: 160-163 - 2012
- [j7]Qing Liu, Jiangtao Sun, Yong-Ju Suh, Nobuyuki Itoh, Toshihiko Yoshimasu:
A CMOS Class-G Supply Modulation for Polar Power Amplifiers with High Average Efficiency and Low Ripple Noise. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. 95-A(2): 487-497 (2012) - 2011
- [j6]Qing Liu, Yusuke Takigawa, Satoshi Kurachi, Nobuyuki Itoh, Toshihiko Yoshimasu:
A 1.2-3.2 GHz CMOS VCO IC Utilizing Transformer-Based Variable Inductors and AMOS Varactors. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. 94-A(2): 568-573 (2011) - [j5]Jiangtao Sun, Qing Liu, Yong-Ju Suh, Takayuki Shibata, Toshihiko Yoshimasu:
A Broadband High Suppression Frequency Doubler IC for Sub-Millimeter-Wave UWB Applications. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. 94-A(2): 603-610 (2011) - [j4]Jiangtao Sun, Qing Liu, Yong-Ju Suh, Takayuki Shibata, Toshihiko Yoshimasu:
A 66-dBc Fundamental Suppression Frequency Doubler IC for UWB Sensor Applications. IEICE Trans. Electron. 94-C(4): 575-581 (2011)
2000 – 2009
- 2009
- [c1]Qing Liu, Jiangtao Sun, Toshihiko Yoshimasu, Satoshi Kurachi, Nobuyuki Itoh:
15 GHz-band low phase-noise LC-VCO with second harmonic tunable filtering technique. PIMRC 2009: 1592-1595 - 2007
- [j3]Satoshi Kurachi, Toshihiko Yoshimasu, Haiwen Liu, Nobuyuki Itoh, Koji Yonemura:
A SiGe BiCMOS VCO IC with Highly Linear Kvco for 5-GHz-Band Wireless LANs. IEICE Trans. Electron. 90-C(6): 1228-1233 (2007) - 2005
- [j2]Satoshi Kurachi, Toshihiko Yoshimasu:
Low Phase Noise, InGaP/GaAs HBT VCO MMIC for Millimeter-Wave Applications. IEICE Trans. Electron. 88-C(4): 678-682 (2005)
1990 – 1999
- 1998
- [j1]Toshihiko Yoshimasu, Masanori Akagi, Noriyuki Tanba, Shinji Hara:
An HBT MMIC power amplifier with an integrated diode linearizer for low-voltage portable phone applications. IEEE J. Solid State Circuits 33(9): 1290-1296 (1998)
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