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ORCIDKenji Tsuchida
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2010 – 2019
- 2019
[c7]Katsuhiko Hoya, Kosuke Hatsuda, Kenji Tsuchida, Yohji Watanabe, Yusuke Shirota, Tatsunori Kanai:
A perspective on NVRAM technology for future computing system. VLSI-DAT 2019: 1-2- 2017
- [c6]Kwangmyoung Rho, Kenji Tsuchida, Dongkeun Kim, Yutaka Shirai, Jihyae Bae, Tsuneo Inaba, Hiromi Noro, Hyunin Moon, Sungwoong Chung, Kazumasa Sunouchi, Jinwon Park, Kiseon Park, Akihito Yamamoto, Seoungju Chung, Hyeongon Kim, Hisato Oyamatsu, Jonghoon Oh:
23.5 A 4Gb LPDDR2 STT-MRAM with compact 9F2 1T1MTJ cell and hierarchical bitline architecture. ISSCC 2017: 396-397 - 2010
- [c5]Kenji Tsuchida, Tsuneo Inaba, Katsuyuki Fujita, Yoshihiro Ueda, Takafumi Shimizu, Yoshiaki Asao, Takeshi Kajiyama, Masayoshi Iwayama, Kuniaki Sugiura, Sumio Ikegawa, Tatsuya Kishi, Tadashi Kai, Minoru Amano, Naoharu Shimomura, Hiroaki Yoda, Yohji Watanabe:
A 64Mb MRAM with clamped-reference and adequate-reference schemes. ISSCC 2010: 258-259
2000 – 2009
- 2008
- [c4]Yoshiaki Asao, Masayoshi Iwayama, Kenji Tsuchida, Akihiro Nitayama, Hiroaki Yoda, Hisanori Aikawa, Sumio Ikegawa, Tatsuya Kishi:
A Statistical Model for Assessing the Fault Tolerance of Variable Switching Currents for a 1Gb Spin Transfer Torque Magnetoresistive Random Access Memory. DFT 2008: 507-515 - 2006
- [c3]Yoshihisa Iwata, Kenji Tsuchida, Tsuneo Inaba, Yui Shimizu, R. Takizawa, Yoshihiro Ueda, Tadahiko Sugibayashi, Yoshiaki Asao, Takeshi Kajiyama, Keiji Hosotani, Sumio Ikegawa, Tadashi Kai, M. Nakayama, Shuichi Tahara, Hiroaki Yoda:
A 16Mb MRAM with FORK Wiring Scheme and Burst Modes. ISSCC 2006: 477-486 - [c2]Yuui Shimizu, Hisanori Aikawa, Keiji Hosotani, Naoharu Shimomura, Tadashi Kai, Yoshihiro Ueda, Yoshiaki Asao, Yoshihisa Iwata, Kenji Tsuchida, Sumio Ikegawa:
MRAM Write Error Categorization with QCKB. MTDT 2006: 43-48 - 2003
- [c1]Tsuneo Inaba, Kenji Tsuchida, Tadahiko Sugibayashi, Shuichi Tahara, Hiroaki Yoda:
Resistance ratio read (R3) architecture for a burst operated 1.5V MRAM macro. CICC 2003: 399-402
1990 – 1999
- 1992
- [j5]Daisaburo Takashima, Yukihito Oowaki, Ryu Ogiwara, Yohji Watanabe, Kenji Tsuchida, Masako Ohta, Hiroaki Nakano, Shigeyoshi Watanabe, Kazunori Ohuchi:
Word-line architecture for highly reliable 64-Mb DRAM. IEEE J. Solid State Circuits 27(4): 603-609 (1992) - 1991
- [j4]Yukihito Oowaki, Kenji Tsuchida, Yohji Watanabe, Daisaburo Takashima, Masako Ohta, Hiroaki Nakano, Shigeyoshi Watanabe, Akihiro Nitayama, Fumio Horiguchi, Kazunori Ohuchi, Fujio Masuoka:
A 33-ns 64-Mb DRAM. IEEE J. Solid State Circuits 26(11): 1498-1505 (1991) - 1990
- [j3]Kenji Tsuchida, Yukihito Oowaki, Masako Ohta, Daisaburo Takashima, Shigeyoshi Watanabe, Kazuya Ohuchi, Fujio Masuoka:
The stabilized reference-line (SRL) technique for scaled DRAMs. IEEE J. Solid State Circuits 25(1): 24-29 (1990)
1980 – 1989
- 1989
- [j2]Shigeyoshi Watanabe, Yukihito Oowaki, Yasuo Itoh, Koji Sakui, Kenji Numata, Tsuneaki Fuse, Takayuki Kobayashi, Kenji Tsuchida, Masahiko Chiba, Takahiko Hara, Masako Ohta, Fumio Horiguchi, Katsuhiko Hieda, Akihiro Nitayama, Takeshi Hamamoto, Kazunori Ohuchi, Fujio Masuoka:
An experimental 16-Mbit CMOS DRAM chip with a 100-MHz serial read/write mode. IEEE J. Solid State Circuits 24(3): 763-770 (1989) - [j1]Kenji Numata, Yukihito Oowaki, Yasuo Itoh, Takahiko Hara, Kenji Tsuchida, Masako Ohta, Shigyoshi Watanabe, Kazunori Ohuchi:
New nibbled-page architecture for high-density DRAMs. IEEE J. Solid State Circuits 24(4): 900-904 (1989)
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