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ORCIDWen Liu 0010
Person information
- affiliation: Xi'an Jiaotong-Liverpool University, Department of Electrical and Electronic Engineering, Suzhou, China
Other persons with the same name
- Wen Liu — disambiguation page
- Wen Liu 0001
![[0000-0002-0655-4114]](https://dblp.uni-trier.de./img/orcid-mark.12x12.png "0000-0002-0655-4114")
— Chiba University, Department of Urban Environment Systems, Japan - Wen Liu 0002 — Beijing University of Posts and Telecommunications, School of Electronics Engineering, China
- Wen Liu 0003 — ShanghaiTech University, School of Information Science and Technology, China
- Wen Liu 0004 — University of Kansas, Department of Physical Therapy and Rehabilitation Science, Kansas City, KS, USA (and 1 more)
- Wen Liu 0005 — Southeast University, National Mobile Communications Research Laboratory, Nanjing, China
- Wen Liu 0006 — Communication University of China, State Key Laboratory of Media Convergence and Communication, Beijing, China (and 1 more)
- Wen Liu 0007 — Chinese Academy of Sciences, Institute of Mechanics, State Key Laboratory of High Temperature Gas Dynamics, Beijing, China
- Wen Liu 0008 — Sun Yat-sen University, School of Data and Computer Science, Guangzhou, China
- Wen Liu 0009 — Hebei Normal University, School of Mathematical Sciences, Hebei Key Laboratory of Computational Mathematics and Applications, Shijiazhuang, China
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Journal Articles
- 2020
[j2]Yutao Cai, Yang Wang, Ye Liang, Yuanlei Zhang, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Cezhou Zhao:
Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices. IEEE Access 8: 95642-95649 (2020)- 2019
- [j1]Miao Cui, Ruize Sun, Qinglei Bu, Wen Liu, Huiqing Wen, Ang Li, Yung C. Liang, Cezhou Zhao:
Monolithic GaN Half-Bridge Stages With Integrated Gate Drivers for High Temperature DC-DC Buck Converters. IEEE Access 7: 184375-184384 (2019)
Conference and Workshop Papers
- 2022
- [c10]Jiachen Duan, Yuanlei Zhang, Ye Liang, Yutao Cai, Wen Liu:
Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al2O3/ZrOx/Al2O3 charge trapping layer. ICICDT 2022: 89-92 - 2021
- [c9]Ang Li, Yi Shen, Ziqian Li, Yuhao Zhu, Huiqing Wen, Wen Liu:
Stability Analysis of Monolithic GaN MIS-HEMT Comparator with Device PBTI and Circuit Stress Tests. ASICON 2021: 1-3 - [c8]Ye Liang, Yuanlei Zhang, Yutao Cai, Zhaoyi Wang, Yinchao Zhao, Huiqing Wen, Wen Liu:
Threshold Voltage Instability in D-mode AlGaN/GaN MIS-HEMTs with Al2O3 Gate Dielectric. ICICDT 2021: 1-4 - [c7]Yuhao Zhu, Miao Cui, Ang Li, Fan Li, Huiqing Wen, Wen Liu:
Monolithic DFF-NAND and DFF-NOR logic circuits based on GaN MIS-HEMT. ICICDT 2021: 1-4 - 2019
- [c6]Qinglei Bu, Yutao Cai, Miao Cui, Huiqing Wen, Wen Liu:
Experimental Comparison of AlGaN/GaN-on-Si Schottky Barrier Diode With and Without Recessed Anode. ICICDT 2019: 1-4 - [c5]Yutao Cai, Yang Wang, Miao Cui, Wen Liu, Huiqing Wen, Cezhou Zhao, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker:
Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices. ICICDT 2019: 1-5 - [c4]Xudong Chen, Huiqing Wen, Qinglei Bu, Wen Liu:
Design of GaN-based Voltage Reference Circuit for a Wide-Temperature-Range Operation. ICICDT 2019: 1-4 - [c3]Miao Cui, Yutao Cai, Qinglei Bu, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker, Cezhou Zhao:
The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters. ICICDT 2019: 1-4 - [c2]Lei Kang, Huiqing Wen, Qinglei Bu, Wen Liu:
Design and Evaluation of GaN-based Over-Temperature Protection Circuit. ICICDT 2019: 1-4 - [c1]Bangbo Sun, Huiqing Wen, Qingling Bu, Wen Liu:
Design and Evaluation of AlGaN/GaN High Electron Mobility Transistor Comparator. ICICDT 2019: 1-4
Coauthor Index
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