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2020 – today
- 2022
[c3]Elia A. Vallicelli
, Valerio Di Palma, Marcello De Matteis, Andrea Baschirotto, Marco Fanciulli:
A 0.46 nV/√Hz JFET Low-Noise Amplifier for Characterization of Nanoelectrode Coating Materials. ICECS 2022 2022: 1-4
2010 – 2019
- 2018
- [j7]Elena Ferraro, Marco Fanciulli, Marco De Michielis:
Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises. Quantum Inf. Process. 17(6): 130 (2018) - 2017
- [j6]Elena Ferraro, Marco Fanciulli, Marco De Michielis:
Controlled-NOT gate sequences for mixed spin qubit architectures in a noisy environment. Quantum Inf. Process. 16(11): 277 (2017) - 2016
- [j5]Davide Rotta, Marco De Michielis, Elena Ferraro, Marco Fanciulli, Enrico Prati:
Maximum density of quantum information in a scalable CMOS implementation of the hybrid qubit architecture. Quantum Inf. Process. 15(6): 2253-2274 (2016) - [j4]Marco Lorenzo Valerio Tagliaferri, Alessandro Crippa, Simone Cocco, Marco De Michielis, Marco Fanciulli, Giorgio Ferrari, Enrico Prati:
Modular Printed Circuit Boards for Broadband Characterization of Nanoelectronic Quantum Devices. IEEE Trans. Instrum. Meas. 65(8): 1827-1835 (2016) - 2015
- [j3]Elena Ferraro, Marco De Michielis, Marco Fanciulli, Enrico Prati:
Effective Hamiltonian for two interacting double-dot exchange-only qubits and their controlled-NOT operations. Quantum Inf. Process. 14(1): 47-65 (2015) - 2014
- [j2]Elena Ferraro, Marco De Michielis, Giovanni Mazzeo, Marco Fanciulli, Enrico Prati:
Effective Hamiltonian for the hybrid double quantum dot qubit. Quantum Inf. Process. 13(5): 1155-1173 (2014) - 2011
- [c2]Xavier Jehl, B. Roche, Marc Sanquer, B. Voisin, Romain Wacquez, Veeresh Deshpande, Bernard Previtali, Maud Vinet, J. Verduijn, Giuseppe Carlo Tettamanzi, Sven Rogge, D. Kotekar-Patil, Matthias Ruoff, D. Kern, D. A. Wharam, M. Belli, Enrico Prati, Marco Fanciulli:
Mass Production of Silicon MOS-SETs: Can We Live with Nano-Devices' Variability? FET 2011: 266-268
2000 – 2009
- 2008
- [c1]Marco Fanciulli:
Principles of entertainment in inhabited television. AVI 2008: 5-12 - 2007
- [j1]Andrei Zenkevich, Yu. Lebedinskii, G. Scarel, Marco Fanciulli, Andrey Baturin, N. Lubovin:
Degradation kinetics of ultrathin HfO2 layers on Si(1 0 0) during vacuum annealing monitored with in situ XPS/LEIS and ex situ AFM. Microelectron. Reliab. 47(4-5): 657-659 (2007)
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