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L. Rehm

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2024
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M. G. Gottwald, Guohan Hu, Philip Louis Trouilloud, L. Rehm, C. Safranski, G. Kim, S. L. Brown, J. Bruley, C. P. D'Emic, O. Gunawan, H. Jung, C. Lavoie, J. Lee, J. Liang, M. Robbins, J. Z. Sun, P. Hashemi, Daniel Christopher Worledge:
First Demonstration of High Retention Energy Barriers and 2 ns Switching, Using Magnetic Ordered-Alloy-Based STT MRAM Devices. VLSI Technology and Circuits 2024: 1-2

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