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ORCIDTsunenobu Kimoto
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- affiliation: Kyoto University, Kyoto, Japan
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Journal Articles
- 2020
[j9]Hironobu Akita, Tsunenobu Kimoto:
Rapid Revolution Speed Control of the Brushless DC Motor for Automotive LIDAR Applications. IEICE Trans. Electron. 103-C(6): 324-331 (2020)- 2012
- [j8]Alberto Castellazzi
, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara:
Thermal instability effects in SiC Power MOSFETs. Microelectron. Reliab. 52(9-10): 2414-2419 (2012) - 2011
- [j7]Alberto Castellazzi, T. Takuno, Ryutaro Onishi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara:
A study of SiC Power BJT performance and robustness. Microelectron. Reliab. 51(9-11): 1773-1777 (2011) - 2008
- [j6]Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara:
High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena. IEICE Electron. Express 5(6): 198-203 (2008) - [j5]Tsuyoshi Funaki, Akira Nishio, Tsunenobu Kimoto, Takashi Hikihara:
A study on electro thermal response of SiC power module during high temperature operation. IEICE Electron. Express 5(16): 597-602 (2008) - 2007
- [j4]Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara:
Evaluation of capacitance-voltage characteristics for high voltage SiC-JFET. IEICE Electron. Express 4(16): 517-523 (2007) - 2006
- [j3]Tsuyoshi Funaki, Shuntaro Matsuzaki, Tsunenobu Kimoto, Takashi Hikihara:
Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage. IEICE Electron. Express 3(16): 379-384 (2006) - 2005
- [j2]Tsuyoshi Funaki, Juan Carlos Balda, Jeremy Junghans, Anuwat Jangwanitlert, Sharmila Mounce, Fred D. Barlow, H. Alan Mantooth, Tsunenobu Kimoto, Takashi Hikihara:
Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters. IEICE Electron. Express 2(3): 97-102 (2005) - 2004
- [j1]Tsuyoshi Funaki, Juan Carlos Balda, Jeremy Junghans, Avinash S. Kashyap, Fred D. Barlow, H. Alan Mantooth, Tsunenobu Kimoto, Takashi Hikihara:
SiC JFET dc characteristics under extremely high ambient temperatures. IEICE Electron. Express 1(17): 523-527 (2004)
Conference and Workshop Papers
- 2024
- [c4]Tsunenobu Kimoto, M. Kaneko, Keita Tachiki, K. Ito, K. Mikami, H. Fujii, A. Inoue, N. Maeda:
An Overview of SiC High-Voltage Power Devices and High-Temperature ICs. BCICTS 2024: 88-94 - 2022
- [c3]Tsunenobu Kimoto, Keita Tachiki, A. Iijima, Mitsuaki Kaneko:
Performance Improvement and Reliability Physics in SiC MOSFETs. IRPS 2022: 5 - 2014
- [c2]Tsunenobu Kimoto:
Progress and future challenges of silicon carbide devices for integrated circuits. CICC 2014: 1-8 - 2013
- [c1]Tsunenobu Kimoto:
Ultrahigh-voltage SiC devices for future power infrastructure. ESSDERC 2013: 22-29
Coauthor Index
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