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Byoung-Sul Kim

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2000 – 2009

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2001
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Kyehyun Kyung, Hi-Choon Lee, Ki-Whan Song, Ho-Sung Song, Keewook Jung, Joon-Seo Moon, Byoung-Sul Kim, Sung-Burn Cho, Changhyun Kim, Soo-In Cho:
A 2.5-V 2.0-Gbyte/s 288-Mb packet-based DRAM with enhanced cell efficiency and noise immunity. IEEE J. Solid State Circuits 36(5): 735-743 (2001)

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