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Atsushi Nozoe

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2001
[j2]
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Tatsuya Ishii, Kazuyoshi Oshima, Hiroshi Sato, Satoshi Noda, Jiro Kishimoto, Hiroaki Kotani, Atsushi Nozoe, Kazunori Furusawa, Takayuki Yoshitake, Masataka Kato, Masahito Takahashi, Akihiko Sato, Shoji Kubono, Kiichi Manita, Kenji Koda, Takeshi Nakayama, Akira Hosogane:
A 126.6-mm² AND-type 512-Mb flash memory with 1.8-V power supply. IEEE J. Solid State Circuits 36(11): 1707-1712 (2001)
1999
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Atsushi Nozoe, Hiroaki Kotani, Tetsuya Tsujikawa, Keiichi Yoshida, Kazunori Furusawa, Masataka Kato, Toshiaki Nishimoto, Hitoshi Kume, Hideaki Kurata, Naoki Miyamoto, Shoji Kubono, Michitaro Kanamitsu, Kenji Koda, Takeshi Nakayama, Yasuhiro Kouro, Akira Hosogane, Natsuo Ajika, Kiyoteru Kobayashi:
A 256-Mb multilevel flash memory with 2-MB/s program rate for mass storage applications. IEEE J. Solid State Circuits 34(11): 1544-1550 (1999)

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