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ORCIDSheng-Hsi Hung
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2020 – today
- 2024
[j6]Sheng-Hsi Hung, Tz-Wun Wang
, Si-Yi Li, Wei-Chien Hung, Ya-Ting Hsu, Ke-Horng Chen, Kuo-Lin Zheng, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai:
A High Common-Mode Transient Immunity GaN-on-SOI Gate Driver With Quad-Drive Control Technique for High dV/dt 1700-V SiC Power Switch. IEEE J. Solid State Circuits 59(8): 2581-2590 (2024)- [j5]Tz-Wun Wang, Po-Jui Chiu, Chi-Yu Chen, Sheng-Hsi Hung, Yu-Ting Huang, Xiao-Quan Wu, Chang-Lin Go, Ke-Horng Chen, Kuo-Lin Zheng, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai:
98.7% Efficiency 1200-48 V LLC Converter Using Triple Step-Down Converter With One-Inductor Technique Compliant With EVSE Level 1. IEEE J. Solid State Circuits 59(12): 4188-4198 (2024) - [c7]Tz-Wun Wang, Sheng-Hsi Hung, Po-Jui Chiu, Chi-Yu Chen, Chang-Lin Go, Yu-Ting Huang, Xiao-Quan Wu, Ke-Horng Chen, Kuo-Lin Zeng, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai:
31.4 98.7% Efficiency 1200V-to-48V LLC Converter with CC/CV Mode Charging Compliant with EVSE Level 1. ISSCC 2024: 502-504 - [c6]Chi-Yu Chen, Tz-Wun Wang, Po-Jui Chiu, Sheng-Hsi Hung, Chang-Lin Go, Xiao-Quan Wu, Yu-Ting Huang, Ke-Horng Chen, Kuo-Lin Zeng, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai:
A Monolithic GaN-based Gate Driver for LLC-SRC with Three-Phase Startup Clamping Achieving 23.2μA IQ and 98.6% Peak Efficiency. VLSI Technology and Circuits 2024: 1-2 - [c5]Po-Jui Chiu, Tz-Wun Wang, Chi-Yu Chen, Sheng-Hsi Hung, Yu-Ting Huang, Xiao-Quan Wu, Ke-Horng Chen, Kuo-Lin Zheng, Chih-Chen Li:
A 15.4ppm/○C GaN-based Voltage Reference with Process-Variation-Immunity and High PSR for EV Power Systems. VLSI Technology and Circuits 2024: 1-2 - [c4]Sheng-Hsi Hung, Tz-Wun Wang, Chien-Wei Cho, Po-Jui Chiu, Chi-Yu Chen, Ke-Horng Chen, Kuo-Lin Zheng, Chih-Chen Li:
Field Plate and Package Optimization for GaN Devices and Systems. VLSI Technology and Circuits 2024: 1-2 - 2023
- [j4]Yong-Hwa Wen, Tz-Wun Wang, Tzu-Hsien Yang, Sheng-Hsi Hung, Kuo-Lin Zheng, Ke-Horng Chen, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai:
A -10 to -20-V Inverting Buck-Boost Drive GaN Driver With Sub-1-μA Leakage Current Vth Tracking Technique for 20-MHz Depletion-Mode GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. IEEE J. Solid State Circuits 58(2): 497-507 (2023) - [j3]Si-Yi Li, Sheng Cheng Lee, Sheng-Hsi Hung, Zheng-Lun Huang, Ke-Horng Chen, Kuo-Lin Zheng, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai:
A 4-40 V Wide Input Range Boost Converter With the Protection Re-Cycling Technique for 200 W High Power LiDAR System in a Long-Distance Object Detection. IEEE J. Solid State Circuits 58(7): 1850-1859 (2023) - [c3]Shu-Yung Lin, Ssu-Yu Lin, Sheng-Hsi Hung, Tz-Wun Wang, Ching-Ho Li, Chang-Lin Go, Shao-Chang Huang, Ke-Horng Chen, Kuo-Lin Zheng, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai:
A GaN Gate Driver with On-chip Adaptive On-time Controller and Negative Current Slope Detector. ISSCC 2023: 306-307 - [c2]Tz-Wun Wang, Si-Yi Li, Sheng-Hsi Hung, Tzu-Ying Wu, Chi-Yu Chen, Po-Jui Chiu, Ke-Horng Chen, Kuo-Lin Zheng, Ying-Hsi Lin, Tsung-Yen Tsai, Shian-Ru Lin:
Multiple-Phase Accelerated Current Control in Bidirectional Energy Transfer of Automotive High-Voltage and Low-Voltage Batteries. ISSCC 2023: 308-309 - 2022
- [j2]Tz-Wun Wang, Yu-Yung Kao, Sheng-Hsi Hung, Yong-Hwa Wen, Tzu-Hsien Yang, Si-Yi Li, Ke-Horng Chen, Kuo-Lin Zheng, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai:
Monolithic GaN-Based Driver and GaN Switch With Diode-Emulated GaN Technique for 50-MHz Operation and Sub-0.2-ns Deadtime Control. IEEE J. Solid State Circuits 57(12): 3877-3888 (2022) - [c1]Yu-Yung Kao, Tz-Wun Wang, Sheng-Hsi Hung, Yong-Hwa Wen, Tzu-Hsien Yang, Si-Yi Li, Ke-Horng Chen, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai:
A Monolithic GaN-Based Driver and GaN Power HEMT with Diode-Emulated GaN Technique for 50MHz Operation and Sub-0.2ns Deadtime Control. ISSCC 2022: 228-230 - 2021
- [j1]Yu-Yung Kao, Sheng-Hsi Hung, Hsuan-Yu Chen, Jia-Jyun Lee, Ke-Horng Chen, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai:
Fully Integrated GaN-on-Silicon Gate Driver and GaN Switch With Temperature-Compensated Fast Turn-on Technique for Achieving Switching Frequency of 50 MHz and Slew Rate of 118.3 V/Ns. IEEE J. Solid State Circuits 56(12): 3619-3627 (2021)
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