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S. Meli

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2000 – 2009

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2004
[j2]
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Marc Porti, S. Meli, Montserrat Nafría, Xavier Aymerich:
Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses. Microelectron. Reliab. 44(9-11): 1523-1528 (2004)
2003
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Marc Porti, S. Meli, Montserrat Nafría, Xavier Aymerich:
Pre-breakdown noise in electrically stressed thin SiO₂ layers of MOS devices observed with C-AFM. Microelectron. Reliab. 43(8): 1203-1209 (2003)

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