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Conference and Workshop Papers
- 2022
[c7]James Spencer Lundh, Hannah N. Masten, Kohei Sasaki, Alan G. Jacobs, Zhe Cheng
, Joseph Spencer, Lei Chen, James C. Gallagher, Andrew D. Koehler, Keita Konishi, Samuel Graham, Akito Kuramata, Karl D. Hobart, Marko J. Tadjer:
AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices. DRC 2022: 1-2- 2021
- [c6]Xinyi Xia, Minghan Xian, Patrick Carey, Chaker Fares, Fan Ren, Marko J. Tadjer, Steve J. Pearton, Thieu Quang Tu, Ken Goto, Akito Kuramata:
Operation Up to 600K of Vertical β-Ga2O3 Schottky Rectifier With 754V Reverse Breakdown Voltage. DRC 2021: 1-2 - 2020
- [c5]Assaad El Helou, Marko J. Tadjer, Karl D. Hobart, Peter E. Raad:
Effects of Thermal Boundary Resistance on the Thermal Performance of GaN HEMT on Diamond. IRPS 2020: 1-4 - 2019
- [c4]Shamima Afroz, Virginia Wheeler, Marko J. Tadjer, James C. Gallagher, Geoffrey Foster, Karl D. Hobart, Brian Novak, Ken A. Nagamatsu, Kevin Frey, Patrick Shea, Rob Howell, Josephine Chang, Andrew D. Koehler, Tatyana Feygelson:
Diamond Superjunction (SJ) Process Development: Super-Lattice Power Amplifier with Diamond Enhanced Superjunction (SPADES). BCICTS 2019: 1-4 - 2018
- [c3]Jinhyun Noh, Mengwei Si, Hong Zhou, Marko J. Tadjer, Peide D. Ye:
The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond. DRC 2018: 1-2 - [c2]Marko J. Tadjer, Travis J. Anderson, James C. Gallagher, Peter E. Raad, Pavel L. Komarov, Andrew D. Koehler, Karl D. Hobart, Fritz J. Kub:
Thermal Performance Improvement of GaN-on-Diamond High Electron Mobility Transistors. DRC 2018: 1-2 - [c1]Jiancheng Yang, Fan Ren, Marko J. Tadjer, Stephen J. Pearton, Akita Kuramata:
2.3 kV Field-Plated Vertical Ga2O3 Schottky Rectifiers and 1 a Forward Current with 650 V Reverse Breakdown Ga2O3 Field-Plated Schottky Barrier Diodes. DRC 2018: 1-2
Coauthor Index
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