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Elia Ambrosi
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2020 – today
- 2023
- [c9]P. C. Chang, P. J. Liao, C. H. Wu, Y. C. Chang, D. H. Hou, Elia Ambrosi, H. Y. Lee, J. H. Lee, X. Y. Bao:
A New Ramp Stress Reliability Assessment on Pulse Energy Based OTS Switching Operation. IRPS 2023: 1-5 - 2022
- [c8]P. C. Chang, P. J. Liao, D. W. Heh, C. Lee, D. H. Hou, Elia Ambrosi, C. H. Wu, H. Y. Lee, J. H. Lee, Xinyu Bao:
Investigation of First Fire Effect on VTH Stability and Endurance in GeCTe Selector. IRPS 2022: 4 - [c7]S. Vaziri, I. M. Datye, Elia Ambrosi, Asir Intisar Khan, H. Kwon, C. H. Wu, C. F. Hsu, J. Guy, T. Y. Lee, H.-S. Philip Wong, X. Y. Bao:
First Fire-free, Low-voltage (~1.2 V), and Low Off-current (~3 nA) SiOxTey Selectors. VLSI Technology and Circuits 2022: 324-325 - 2021
- [c6]Giacomo Pedretti, Elia Ambrosi, Daniele Ielmini:
Conductance variations and their impact on the precision of in-memory computing with resistive switching memory (RRAM). IRPS 2021: 1-8 - 2020
- [b1]Elia Ambrosi:
Characterization of resistive switching devices for memory and computing. Polytechnic University of Milan, Italy, 2020 - [j1]Zhong Sun, Giacomo Pedretti, Elia Ambrosi, Alessandro Bricalli, Daniele Ielmini:
In-Memory Eigenvector Computation in Time O (1). Adv. Intell. Syst. 2(8): 2000042 (2020) - [c5]Zhong Sun, Giacomo Pedretti, Elia Ambrosi, Alessandro Bricalli, Daniele Ielmini:
In-memory PageRank using a Crosspoint Array of Resistive Switching Memory (RRAM) devices. AICAS 2020: 26-30 - [i2]Zhong Sun, Giacomo Pedretti, Piergiulio Mannocci, Elia Ambrosi, Alessandro Bricalli, Daniele Ielmini:
Time complexity of in-memory solution of linear systems. CoRR abs/2005.04530 (2020) - [i1]Zhong Sun, Giacomo Pedretti, Elia Ambrosi, Alessandro Bricalli, Daniele Ielmini:
In-memory eigenvector computation in time O(1). CoRR abs/2005.04531 (2020)
2010 – 2019
- 2019
- [c4]Zhong Sun, Giacomo Pedretti, Elia Ambrosi, Alessandro Bricalli, Wei Wang, Daniele Ielmini:
In-memory solution of linear systems with crosspoint arrays without iterations. DRC 2019: 215-216 - [c3]Nicola Polino, Mario Laudato, Elia Ambrosi, Alessandro Bricalli, Daniele Ielmini:
Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage. ESSDERC 2019: 126-129 - [c2]Erika Covi, Daniele Ielmini, Y.-H. Lin, Wei Wang, Tommaso Stecconi, Valerio Milo, Alessandro Bricalli, Elia Ambrosi, Giacomo Pedretti, Tseung-Yuen Tseng:
A Volatile RRAM Synapse for Neuromorphic Computing. ICECS 2019: 903-906 - 2018
- [c1]Valerio Milo, Giacomo Pedretti, Mario Laudato, Alessandro Bricalli, Elia Ambrosi, Stefano Bianchi, Elisabetta Chicca, Daniele Ielmini:
Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks. ISCAS 2018: 1-5
Coauthor Index
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