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2020 – today
- 2024
[c4]Menggan Liu, Zhi Li, Wendong Lu, Kaifei Chen, Jiebin Niu, Fuxi Liao, Zijing Wu, Congyan Lu, Weizeng Li, Di Geng, Nianduan Lu, Chunmeng Dou, Guanhua Yang, Ling Li, Ming Liu:
First Demonstration of Monolithic Three-Dimensional Integration of Ultra-High Density Hybrid IGZO/Si SRAM and IGZO 2T0C DRAM Achieving Record-Low Latency (5000s). VLSI Technology and Circuits 2024: 1-2- 2022
- [c3]Kailiang Huang, Xinlv Duan, Junxiao Feng, Ying Sun, Congyan Lu, Chuanke Chen, Guangfan Jiao, Xinpeng Lin, Jinhai Shao, Shihui Yin, Jiazhen Sheng
, Zhaogui Wang, Wenqiang Zhang, Xichen Chuai, Jiebin Niu, Wenwu Wang, Ying Wu, Weiliang Jing, Zhengbo Wang, Jeffrey Xu, Guanhua Yang, Di Geng, Ling Li, Ming Liu:
Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application. VLSI Technology and Circuits 2022: 296-297 - [c2]Kaifei Chen, Jiebin Niu, Guanhua Yang, Menggan Liu, Wendong Lu, Fuxi Liao, Kailiang Huang, XinLv Duan, Congyan Lu, Jiawei Wang, Lingfei Wang, Mengmeng Li, Di Geng, Chao Zhao, Guilei Wang, Nianduan Lu, Ling Li, Ming Liu:
Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high Gm, max of 559 µS/µm at VDS=1 V, Record-low DIBL of 10 mV/V and Nearly Ideal SS of 63 mV/dec. VLSI Technology and Circuits 2022: 298-299 - [c1]Yuan Qin, Congyan Lu, Zhaoan Yu, Zhihong Yao, Feihong Wu, Danian Dong, Xiaolong Zhao, Guangwei Xu, Yuhao Zhang, Shibing Long, Ling Li, Ming Liu:
First Demonstration of High-Sensitivity (NEP 1fW1/2) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic Integration of Ga2O3 Photodetectors and Oxide Thin-Film-Transistors. VLSI Technology and Circuits 2022: 345-346
2010 – 2019
- 2019
- [j2]Linan Li, Wenqiang Ba, Wei Wang, Ling Li, Guangwei Xu, Lingfei Wang, Zhuoyu Ji, Congyan Lu, Writam Banerjee:
A physical model for dual gate a-InGaZnO thin film transistors based on multiple trapping and release mechanism. Microelectron. J. 86: 1-6 (2019) - 2018
- [j1]Xiaolong Zhao, Rui Wang, Xiangheng Xiao, Congyan Lu, Facai Wu, Rongrong Cao, Changzhong Jiang, Qi Liu:
Flexible cation-based threshold selector for resistive switching memory integration. Sci. China Inf. Sci. 61(6): 060413:1-060413:8 (2018)
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