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F. Boige

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Journal Articles

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2019
[j4]
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  - journals/mcs/BoigeRLC19
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F. Boige, Frédéric Richardeau, Stéphane Lefebvre, Marc Cousineau:
SiC power MOSFET in short-circuit operation: Electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation. Math. Comput. Simul. 158: 375-386 (2019)
2018
[j3]
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F. Boige, Frédéric Richardeau, Stéphane Lefebvre, Jean-Marc Blaquière, G. Guibaud, A. Bourennane:
Ensure an original and safe "fail-to-open" mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation. Microelectron. Reliab. 88-90: 598-603 (2018)
2017
[j2]
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F. Boige, Frédéric Richardeau, David Trémouilles, Stéphane Lefebvre, G. Guibaud:
Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. Microelectron. Reliab. 76-77: 500-506 (2017)
[j1]
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F. Boige, Frédéric Richardeau:
Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operation. Microelectron. Reliab. 76-77: 532-538 (2017)

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