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Donghyuk Yun

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2020 – today

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2021
[j4]
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  - journals/access/YunPBBW21
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  - https://dblp.org/rec/journals/access/YunPBBW21
Donghyuk Yun, Myungsang Park, GeunYong Bak, Sanghyeon Baeg, Shi-Jie Wen:
Exploitations of Multiple Rows Hammering and Retention Time Interactions in DRAM Using X-Ray Radiation. IEEE Access 9: 137514-137523 (2021)

2010 – 2019

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2018
[j3]
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Chul Seung Lim, Kyungbae Park, GeunYong Bak, Donghyuk Yun, Myungsang Park, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong:
Study of proton radiation effect to row hammer fault in DDR4 SDRAMs. Microelectron. Reliab. 80: 85-90 (2018)
[c1]
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  - conf/irps/YunPLB18
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Donghyuk Yun, Myungsang Park, Chul Seung Lim, Sanghyeon Baeg:
Study of TID effects on one row hammering using gamma in DDR4 SDRAMs. IRPS 2018: 2-1
2016
[j2]
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  - journals/mr/ParkLYB16
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Kyungbae Park, Chul Seung Lim, Donghyuk Yun, Sanghyeon Baeg:
Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3 × nm technology. Microelectron. Reliab. 57: 39-46 (2016)
[j1]
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Kyungbae Park, Donghyuk Yun, Sanghyeon Baeg:
Statistical distributions of row-hammering induced failures in DDR3 components. Microelectron. Reliab. 67: 143-149 (2016)

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