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ORCIDYutaro Yamaguchi 0002
Person information
- affiliation: Mitsubishi Electric Corporation, Japan
Other persons with the same name
- Yutaro Yamaguchi 0001
![[0000-0002-1919-7195]](https://dblp.uni-trier.de./img/orcid-mark.12x12.png "0000-0002-1919-7195")
— Osaka University, Japan (and 1 more) - Yutaro Yamaguchi 0003 — University of Tsukuba, Japan
- Yutaro Yamaguchi 0004 — Tokyo Institute of Technology, Japan
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Journal Articles
- 2022
[j3]Keigo Nakatani, Yutaro Yamaguchi, Takuma Torii, Masaomi Tsuru:
A Review of GaN MMIC Power Amplifier Technologies for Millimeter-Wave Applications. IEICE Trans. Electron. 105-C(10): 433-440 (2022)- 2021
- [j2]Koji Yamanaka, Shintaro Shinjo, Yuji Komatsuzaki, Shuichi Sakata, Keigo Nakatani, Yutaro Yamaguchi:
Overview and Prospects of High Power Amplifier Technology Trend for 5G and beyond 5G Base Stations. IEICE Trans. Electron. 104-C(10): 526-533 (2021) - 2019
- [j1]Yutaro Yamaguchi, Masatake Hangai, Shintaro Shinjo, Takaaki Yoshioka, Naoki Kosaka:
GaN Amplifiers of Selectable Output Power Function with Semi-Custom Matching Networks. IEICE Trans. Electron. 102-C(10): 682-690 (2019)
Conference and Workshop Papers
- 2020
- [c6]Yutaro Yamaguchi, Keigo Nakatani, Shintaro Shinjo:
A Wideband and High Efficiency Ka-band GaN Doherty Power Amplifier for 5G Communications. BCICTS 2020: 1-4 - [c5]Yutaro Yamaguchi, Keigo Nakatani, Koon Hoo Teo, Shintaro Shinjo:
Millimeter-Wave GaN Device Modeling for Power Amplifiers. DRC 2020: 1-2 - 2019
- [c4]Keigo Nakatani, Yutaro Yamaguchi, Masatake Hangai, Shintaro Shinjo:
A Ka-Band CW 15.5W 15.6% Fractional Bandwidth GaN Power Amplifier MMIC Using Wideband BPF Inter-stage Matching Network. BCICTS 2019: 1-4 - [c3]Tomohiro Otsuka, Yutaro Yamaguchi, Shintaro Shinjo, Toshiyuki Oishi:
Study of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation. BCICTS 2019: 1-4 - [c2]Keigo Nakatani, Yutaro Yamaguchi, Yuji Komatsuzaki, Shintaro Shinjo:
Millimeter-Wave GaN Power Amplifier MMICs for 5G Application. ISCAS 2019: 1-4 - 2018
- [c1]Yutaro Yamaguchi, Tomohiro Otsuka, Masatake Hangai, Shintaro Shinjo, Toshiyuki Oishi:
Ka-Band GaN Large-Signal Model Considering Trap Effect on Nonlinear Capacitance by Using Transient S-Parameters Measurement. BCICTS 2018: 48-51
Coauthor Index
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