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Daniel Pardo 0004

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affiliation: Universidad de Salamanca, Spain

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Journal Articles

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2001
[j3]
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  dblp key:
  - journals/mr/MateosGPHC01
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  - https://dblp.org/rec/journals/mr/MateosGPHC01
Javier Mateos, Tomás González, Daniel Pardo, Virginie Hoel, Alain Cappy:
Monte Carlo simulation of electronic characteristics in short channel δ-doped AlInAs/GaInAs HEMTs. Microelectron. Reliab. 41(1): 73-77 (2001)
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M. J. Martín-Martínez, Susana Pérez, Daniel Pardo, Tomás González:
High injection effects on noise characteristics of Si BJTs and SiGe HBTs. Microelectron. Reliab. 41(6): 847-854 (2001)
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  - journals/vlsi/ShiktorovSGGMPR01
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Pavel Shiktorov, Evjeni Starikov, Viktor Gruzinskis, Tomás González, Javier Mateos, Daniel Pardo, Luca Reggiani, Luca Varani, Jean Claude Vaissière:
Langevin Forces and Generalized Transfer Fields for Noise Modelling in Deep Submicron Devices. VLSI Design 13(1-4): 85-90 (2001)

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