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Lu Lu 0013
Person information
- affiliation: Nanyang Technological University, School of Electrical and Electronic Engineering, Singapore
Other persons with the same name
- Lu Lu — disambiguation page
- Lu Lu 0001 — Chinese Academy of Sciences, Technology and Engineering Center for Space Utilization, Beijing, China (and 2 more)
- Lu Lu 0002 — Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA, USA (and 2 more)
- Lu Lu 0003 — New Jersey Institute of Technology, Department of Mechanical and Industrial Engineering, Newark, NJ, USA (and 3 more)
- Lu Lu 0004 — University of Tennessee, Health Science Center, Memphis, TN, USA (and 1 more)
- Lu Lu 0005 — Sichuan University, College of Electronics and Information Engineering, Chengdu, China (and 1 more)
- Lu Lu 0006 — Huazhong University of Science and Technology, Services Computing Technology and System Lab / Big Data Technology and System Lab, China
- Lu Lu 0007 — University of South Florida, Department of Mathematics and Statistics, Tampa, FL, USA (and 1 more)
- Lu Lu 0008 — China University of Mining and Technology, School of Environment Science and Spatial Informatics, Xuzhou, China
- Lu Lu 0009 — LSI Corporation, Milpitas, CA, USA (and 1 more)
- Lu Lu 0010 — Brown University, Division of Applied Mathematics, Providence, RI, USA
- Lu Lu 0011 — South China University of Technology, School of Computer Science and Engineering, Guangzhou, China (and 1 more)
- Lu Lu 0012 — Central South University, School of Mathematics and Statistics, Changsha, Hunan, China (and 1 more)
- Lu Lu 0014 — Harbin Institute of Technology, School of Economic and Management, China
- Lu Lu 0015 — Bytedance Inc., ByteDance AI Lab, Speech and Audio Team
- Lu Lu 0016 — China Mobile Research Institute, Department of Basic Network Technology, Beijing, China
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2020 – today
- 2024
- [j10]Junjie Mu, Lu Lu, Ju Eon Kim, Byung-Kwon An, Vishal Sharma, Arya Jagath Lekshmi, Putu Andhita Dananjaya, Weng Hong Lai, Wen Siang Lew, Tony Tae-Hyoung Kim:
A 1-Mb RRAM Macro With 9.8 ns Read Access Time Utilizing Dynamic Reference Voltage for Reliable Sensing Operation. IEEE Trans. Circuits Syst. II Express Briefs 71(5): 2564-2568 (2024) - 2023
- [j9]Yuzong Chen, Junjie Mu, Hyunjoon Kim, Lu Lu, Tony Tae-Hyoung Kim:
BP-SCIM: A Reconfigurable 8T SRAM Macro for Bit-Parallel Searching and Computing In-Memory. IEEE Trans. Circuits Syst. I Regul. Pap. 70(5): 2016-2027 (2023) - [j8]Lu Lu, Anh-Tuan Do:
A 47 TOPS/W 10T SRAM-Based Multi-Bit Signed CIM With Self-Adaptive Bias Voltage Generator for Edge Computing Applications. IEEE Trans. Circuits Syst. II Express Briefs 70(9): 3599-3603 (2023) - [c11]Lu Lu, Aarthy Mani, Anh Tuan Do:
A 129.83 TOPS/W Area Efficient Digital SOT/STT MRAM-Based Computing-In-Memory for Advanced Edge AI Chips. ISCAS 2023: 1-5 - [c10]Qibang Zang, Wang Ling Goh, Lu Lu, Chengshuo Yu, Junjie Mu, Tony Tae-Hyoung Kim, Bongjin Kim, Dongrui Li, Anh Tuan Do:
282-to-607 TOPS/W, 7T-SRAM Based CiM with Reconfigurable Column SAR ADC for Neural Network Processing. ISCAS 2023: 1-5 - 2022
- [j7]Vishal Sharma, Ju Eon Kim, Hyunjoon Kim, Lu Lu, Tony Tae-Hyoung Kim:
A Reconfigurable 16Kb AND8T SRAM Macro With Improved Linearity for Multibit Compute-In Memory of Artificial Intelligence Edge Devices. IEEE J. Emerg. Sel. Topics Circuits Syst. 12(2): 522-535 (2022) - [j6]Lu Lu, Taegeun Yoo, Tony Tae-Hyoung Kim:
A 6T SRAM Based Two-Dimensional Configurable Challenge-Response PUF for Portable Devices. IEEE Trans. Circuits Syst. I Regul. Pap. 69(6): 2542-2552 (2022) - [j5]Lu Lu, Tony Tae-Hyoung Kim:
A High Reliable SRAM-Based PUF With Enhanced Challenge-Response Space. IEEE Trans. Circuits Syst. II Express Briefs 69(2): 589-593 (2022) - [c9]Yuzong Chen, Junjie Mu, Hyunjoon Kim, Lu Lu, Tony Tae-Hyoung Kim:
A Reconfigurable 8T SRAM Macro for Bit-Parallel Searching and Computing In-Memory. ISCAS 2022: 2556-2560 - [c8]Qibang Zang, Wang Ling Goh, Fei Li, Lu Lu, Anh Tuan Do:
Temperature Compensation on SRAM-Based Computation in Memory Array. ISOCC 2022: 1-2 - 2021
- [j4]Yuzong Chen, Lu Lu, Bongjin Kim, Tony Tae-Hyoung Kim:
A Reconfigurable 4T2R ReRAM Computing In-Memory Macro for Efficient Edge Applications. IEEE Open J. Circuits Syst. 2: 210-222 (2021) - [c7]Lu Lu, Tony Tae-Hyoung Kim:
A Programmable 6T SRAM-Based PUF with Dynamic Stability Data Masking. A-SSCC 2021: 1-3 - [c6]Yuzong Chen, Lu Lu, Yuncheng Lu, Tony Tae-Hyoung Kim:
A Multi-Functional 4T2R ReRAM Macro Enabling 2-Dimensional Access and Computing In-Memory. ISCAS 2021: 1-5 - [c5]Lu Lu, Yuzong Chen, Tony Tae-Hyoung Kim:
A Configurable Randomness Enhanced RRAM PUF with Biased Current Sensing Scheme. ISCAS 2021: 1-5 - 2020
- [j3]Lu Lu, Taegeun Yoo, Van Loi Le, Tony Tae-Hyoung Kim:
A 0.506-pJ 16-kb 8T SRAM With Vertical Read Wordlines and Selective Dual Split Power Lines. IEEE Trans. Very Large Scale Integr. Syst. 28(6): 1345-1356 (2020) - [j2]Yuzong Chen, Lu Lu, Bongjin Kim, Tony Tae-Hyoung Kim:
Reconfigurable 2T2R ReRAM Architecture for Versatile Data Storage and Computing In-Memory. IEEE Trans. Very Large Scale Integr. Syst. 28(12): 2636-2649 (2020) - [c4]Lu Lu, Ju Eon Kim, Vishal Sharma, Tony Tae-Hyoung Kim:
ReRAM Device and Circuit Co-Design Challenges in Nano-scale CMOS Technology. APCCAS 2020: 213-216 - [c3]Yuzong Chen, Lu Lu, Bongjin Kim, Tony Tae-Hyoung Kim:
Reconfigurable 2T2R ReRAM with Split Word-Lines for TCAM Operation and In-Memory Computing. ISCAS 2020: 1-5
2010 – 2019
- 2019
- [j1]Achiranshu Garg, Zhao Chuan Lee, Lu Lu, Tony Tae-Hyoung Kim:
Improving uniformity and reliability of SRAM PUFs utilizing device aging phenomenon for unique identifier generation. Microelectron. J. 90: 29-38 (2019) - [c2]Lu Lu, Tony Tae-Hyoung Kim:
A Sequence-Dependent Configurable PUF Based on 6T SRAM for Enhanced Challenge Response Space. ISCAS 2019: 1-5 - 2018
- [c1]Lu Lu, Taegeun Yoo, Van Loi Le, Tony Tae-Hyoung Kim:
An Ultra-low Power 8T SRAM with Vertical Read Word Line and Data Aware Write Assist. A-SSCC 2018: 1-2
Coauthor Index
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last updated on 2024-11-30 01:09 CET by the dblp team
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