default search action
Google
Google Scholar
Semantic Scholar
Internet Archive Scholar
CiteSeerX
ORCIDMakoto Yabuuchi
Person information
Refine list
refinements active!
zoomed in on ?? of ?? records
view refined list in
export refined list as
2020 – today
- 2024
[j10]Yumito Aoyagi
, Koji Nii, Makoto Yabuuchi, Tomotaka Tanaka, Yuichiro Ishii, Yoshiaki Osada, Takaaki Nakazato, Isabel Wang, Yu-Hao Hsu, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang:
A 3-nm FinFET 27.6-Mbit/mm2 Single-Port 6T SRAM Enabling 0.48-1.2 V Wide Operating Range With Far-End Pre-Charge and Weak-Bit Tracking. IEEE J. Solid State Circuits 59(4): 1225-1234 (2024)- [c26]Tomotaka Tanaka, Yuichiro Ishii, Makoto Yabuuchi, Yumito Aoyagi, Masaya Hamada, Kazuto Mizutani, Koji Nii, Hidehiro Fujiwara, Isabel Wang, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang:
A 3nm Fin-FET 19.87-Mbit/mm2 2RW Pseudo Dual-Port 6T SRAM with High-R Wire Tracking and Sequential Access Aware Dynamic Power Reduction. VLSI Technology and Circuits 2024: 1-2 - 2023
- [c25]Yumito Aoyagi, Makoto Yabuuchi, Tomotaka Tanaka, Yuichiro Ishii, Yoshiaki Osada, Takaaki Nakazato, Koji Nii, Isabel Wang, Yu-Hao Hsu, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang:
A 3-nm 27.6-Mbit/mm2 Self-timed SRAM Enabling 0.48 - 1.2 V Wide Operating Range with Far-end Pre-charge and Weak-Bit Tracking. VLSI Technology and Circuits 2023: 1-2 - 2021
- [j9]Mitsuhiko Igarashi, Yuuki Uchida, Yoshio Takazawa, Makoto Yabuuchi, Yasumasa Tsukamoto, Koji Shibutani, Kazutoshi Kobayashi:
An Analysis of Local BTI Variation with Ring-Oscillator in Advanced Processes and Its Impact on Logic Circuit and SRAM. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. 104-A(11): 1536-1545 (2021) - 2020
- [c24]Makoto Yabuuchi, Masao Morimoto, Yasumasa Tsukamoto, Shinji Tanaka:
A 7nm Fin-FET 4.04-Mb/mm2 TCAM with Improved Electromigration Reliability Using Far-Side Driving Scheme and Self-Adjust Reference Match-Line Amplifier. VLSI Circuits 2020: 1-2 - [c23]Yoshisato Yokoyama, Miki Tanaka, Koji Tanaka, Masao Morimoto, Makoto Yabuuchi, Yuichiro Ishii, Shinji Tanaka:
A 29.2 Mb/mm2 Ultra High Density SRAM Macro using 7nm FinFET Technology with Dual-Edge Driven Wordline/Bitline and Write/Read-Assist Circuit. VLSI Circuits 2020: 1-2
2010 – 2019
- 2019
- [c22]Mitsuhiko Igarashi, Yuuki Uchida, Yoshio Takazawa, Makoto Yabuuchi, Yasumasa Tsukamoto, Koji Shibutani:
Study of Local BTI Variation and its Impact on Logic Circuit and SRAM in 7 nm Fin-FET Process. IRPS 2019: 1-6 - [c21]Shunsuke Okumura, Makoto Yabuuchi, Kenichiro Hijioka, Koichi Nose:
A Ternary Based Bit Scalable, 8.80 TOPS/W CNN accelerator with Many-core Processing-in-memory Architecture with 896K synapses/mm2. VLSI Circuits 2019: 248- - 2018
- [j8]Makoto Yabuuchi, Yasumasa Tsukamoto, Hidehiro Fujiwara, Miki Tanaka, Shinji Tanaka, Koji Nii:
A 28-nm 1R1W Two-Port 8T SRAM Macro With Screening Circuitry Against Read Disturbance and Wordline Coupling Noise Failures. IEEE Trans. Very Large Scale Integr. Syst. 26(11): 2335-2344 (2018) - [c20]Yoshisato Yokoyama, Tomohiro Miura, Yukari Ouchi, Daisuke Nakamura, Jiro Ishikawa, Shunya Nagata, Makoto Yabuuchi, Yuichiro Ishii, Koji Nii:
40-nm 64-kbit Buffer/Backup SRAM with 330 nW Standby Power at 65°C Using 3.3 V IO MOSs for PMIC less MCU in IoT Applications. A-SSCC 2018: 9-12 - [c19]Makoto Yabuuchi, Masao Morimoto, Koji Nii, Shinji Tanaka:
12-NM Fin-FET 3.0G-Search/s 80-Bit × 128-Entry Dual-Port Ternary CAM. VLSI Circuits 2018: 19-20 - 2016
- [c18]Yuichiro Ishii, Makoto Yabuuchi, Yohei Sawada, Masao Morimoto, Yasumasa Tsukamoto, Yuta Yoshida, Ken Shibata, Toshiaki Sano, Shinji Tanaka, Koji Nii:
A 5.92-Mb/mm2 28-nm pseudo 2-read/write dual-port SRAM using double pumping circuitry. A-SSCC 2016: 17-20 - [c17]Makoto Yabuuchi, Yohei Sawada, Toshiaki Sano, Yuichiro Ishii, Shinji Tanaka, Miki Tanaka, Koji Nii:
A 6.05-Mb/mm2 16-nm FinFET double pumping 1W1R 2-port SRAM with 313 ps read access time. VLSI Circuits 2016: 1-2 - 2015
- [c16]Yasumasa Tsukamoto, Masao Morimoto, Makoto Yabuuchi, Miki Tanaka, Koji Nii:
1.8 Mbit/mm2 ternary-CAM macro with 484 ps search access time in 16 nm Fin-FET bulk CMOS technology. VLSIC 2015: 274- - 2014
- [j7]Yohei Nakata, Yuta Kimi, Shunsuke Okumura, Jinwook Jung, Takuya Sawada, Taku Toshikawa, Makoto Nagata, Hirofumi Nakano, Makoto Yabuuchi, Hidehiro Fujiwara, Koji Nii, Hiroyuki Kawai, Hiroshi Kawaguchi, Masahiko Yoshimoto:
A 40-nm Resilient Cache Memory for Dynamic Variation Tolerance Delivering ×91 Failure Rate Improvement under 35% Supply Voltage Fluctuation. IEICE Trans. Electron. 97-C(4): 332-341 (2014) - [j6]Yukiko Umemoto, Koji Nii, Jiro Ishikawa, Makoto Yabuuchi, Kazuyoshi Okamoto, Yasumasa Tsukamoto, Shinji Tanaka, Koji Tanaka, Tetsuya Matsumura, Kazutaka Mori, Kazumasa Yanagisawa:
28 nm 50% Power-Reducing Contacted Mask Read Only Memory Macro With 0.72-ns Read Access Time Using 2T Pair Bitcell and Dynamic Column Source Bias Control Technique. IEEE Trans. Very Large Scale Integr. Syst. 22(3): 575-584 (2014) - [c15]Yohei Nakata, Yuta Kimi, Shunsuke Okumura, Jinwook Jung, Takuya Sawada, Taku Toshikawa, Makoto Nagata, Hirofumi Nakano, Makoto Yabuuchi, Hidehiro Fujiwara, Koji Nii, Hiroyuki Kawai, Hiroshi Kawaguchi, Masahiko Yoshimoto:
A 40-nm resilient cache memory for dynamic variation tolerance with bit-enhancing memory and on-chip diagnosis structures delivering ×91 failure rate improvement. ISQED 2014: 16-23 - [c14]Hidehiro Fujiwara, Makoto Yabuuchi, Koji Nii:
Assessing uniqueness and reliability of SRAM-based Physical Unclonable Functions from silicon measurements in 45-nm bulk CMOS. ISQED 2014: 523-528 - [c13]Makoto Yabuuchi, Yasumasa Tsukamoto, Masao Morimoto, Miki Tanaka, Koji Nii:
13.3 20nm High-density single-port and dual-port SRAMs with wordline-voltage-adjustment system for read/write assists. ISSCC 2014: 234-235 - [c12]Shinji Tanaka, Yuichiro Ishii, Makoto Yabuuchi, Toshiaki Sano, Koji Tanaka, Yasumasa Tsukamoto, Koji Nii, Hirotoshi Sato:
A 512-kb 1-GHz 28-nm partially write-assisted dual-port SRAM with self-adjustable negative bias bitline. VLSIC 2014: 1-2 - 2013
- [c11]Makoto Yabuuchi, Hidehiro Fujiwara, Yasumasa Tsukamoto, Miki Tanaka, Shinji Tanaka, Koji Nii:
A 28nm high density 1R/1W 8T-SRAM macro with screening circuitry against read disturb failure. CICC 2013: 1-4 - [c10]Koji Nii, Makoto Yabuuchi, Hidehiro Fujiwara, Yasumasa Tsukamoto, Yuichiro Ishii, Tetsuya Matsumura, Yoshio Matsuda:
A cost-effective 45nm 6T-SRAM reducing 50mV Vmin and 53% standby leakage with multi-Vt asymmetric halo MOS and write assist circuitry. ISQED 2013: 438-441 - 2012
- [c9]Koji Nii, Yasumasa Tsukamoto, Yuichiro Ishii, Makoto Yabuuchi, Hidehiro Fujiwara, Kazuyoshi Okamoto:
A Test Screening Method for 28 nm HK/MG Single-Port and Dual-Port SRAMs Considering with Dynamic Stability and Read/Write Disturb Issues. Asian Test Symposium 2012: 246-251 - [c8]Yasumasa Tsukamoto, Makoto Yabuuchi, Hidehiro Fujiwara, Koji Nii, Changhwan Shin, Tsu-Jae King Liu:
Quasi-Planar Tri-gate (QPT) bulk CMOS technology for single-port SRAM application. ISQED 2012: 270-274 - [c7]Yuichiro Ishii, Yasumasa Tsukamoto, Koji Nii, Hidehiro Fujiwara, Makoto Yabuuchi, Koji Tanaka, Shinji Tanaka, Yasuhisa Shimazaki:
A 28nm 360ps-access-time two-port SRAM with a time-sharing scheme to circumvent read disturbs. ISSCC 2012: 236-238 - [c6]Hidehiro Fujiwara, Makoto Yabuuchi, Yasumasa Tsukamoto, Hirofumi Nakano, Toru Owada, Hiroyuki Kawai, Koji Nii:
A stable chip-ID generating physical uncloneable function using random address errors in SRAM. SoCC 2012: 143-147 - 2011
- [c5]Makoto Yabuuchi, Yasumasa Tsukamoto, Hidehiro Fujiwara, Shigeki Tawa, Koji Maekawa, Motoshige Igarashi, Koji Nii:
A dynamic body-biased SRAM with asymmetric halo implant MOSFETs. ISLPED 2011: 285-290 - 2010
- [c4]Koji Nii, Makoto Yabuuchi, Yasumasa Tsukamoto, Yuuichi Hirano, Toshiaki Iwamatsu, Yuji Kihara:
A 0.5V 100MHz PD-SOI SRAM with enhanced read stability and write margin by asymmetric MOSFET and forward body bias. ISSCC 2010: 356-357 - [c3]Koji Nii, Makoto Yabuuchi, Hidehiro Fujiwara, Hirofumi Nakano, Kazuya Ishihara, Hiroyuki Kawai, Kazutami Arimoto:
Dependable SRAM with enhanced read-/write-margins by fine-grained assist bias control for low-voltage operation. SoCC 2010: 519-524
2000 – 2009
- 2009
- [j5]Koji Nii, Yasumasa Tsukamoto, Makoto Yabuuchi, Yasuhiro Masuda, Susumu Imaoka, Keiichi Usui, Shigeki Ohbayashi, Hiroshi Makino, Hirofumi Shinohara:
Synchronous Ultra-High-Density 2RW Dual-Port 8T-SRAM With Circumvention of Simultaneous Common-Row-Access. IEEE J. Solid State Circuits 44(3): 977-986 (2009) - 2008
- [j4]Shigeki Ohbayashi, Makoto Yabuuchi, Kazushi Kono, Yuji Oda, Susumu Imaoka, Keiichi Usui, Toshiaki Yonezu, Takeshi Iwamoto, Koji Nii, Yasumasa Tsukamoto, Masashi Arakawa, Takahiro Uchida, Masakazu Okada, Atsushi Ishii, Tsutomu Yoshihara, Hiroshi Makino, Koichiro Ishibashi, Hirofumi Shinohara:
A 65 nm Embedded SRAM With Wafer Level Burn-In Mode, Leak-Bit Redundancy and Cu E-Trim Fuse for Known Good Die. IEEE J. Solid State Circuits 43(1): 96-108 (2008) - [j3]Koji Nii, Makoto Yabuuchi, Yasumasa Tsukamoto, Shigeki Ohbayashi, Susumu Imaoka, Hiroshi Makino, Yoshinobu Yamagami, Satoshi Ishikura, Toshio Terano, Toshiyuki Oashi, Keiji Hashimoto, Akio Sebe, Gen Okazaki, Katsuji Satomi, Hironori Akamatsu, Hirofumi Shinohara:
A 45-nm Bulk CMOS Embedded SRAM With Improved Immunity Against Process and Temperature Variations. IEEE J. Solid State Circuits 43(1): 180-191 (2008) - [j2]Satoshi Ishikura, Marefusa Kurumada, Toshio Terano, Yoshinobu Yamagami, Naoki Kotani, Katsuji Satomi, Koji Nii, Makoto Yabuuchi, Yasumasa Tsukamoto, Shigeki Ohbayashi, Toshiyuki Oashi, Hiroshi Makino, Hirofumi Shinohara, Hironori Akamatsu:
A 45 nm 2-port 8T-SRAM Using Hierarchical Replica Bitline Technique With Immunity From Simultaneous R/W Access Issues. IEEE J. Solid State Circuits 43(4): 938-945 (2008) - 2007
- [j1]Shigeki Ohbayashi, Makoto Yabuuchi, Koji Nii, Yasumasa Tsukamoto, Susumu Imaoka, Yuji Oda, Tsutomu Yoshihara, Motoshige Igarashi, Masahiko Takeuchi, Hiroshi Kawashima, Yasuo Yamaguchi, Kazuhiro Tsukamoto, Masahide Inuishi, Hiroshi Makino, Koichiro Ishibashi, Hirofumi Shinohara:
A 65-nm SoC Embedded 6T-SRAM Designed for Manufacturability With Read and Write Operation Stabilizing Circuits. IEEE J. Solid State Circuits 42(4): 820-829 (2007) - [c2]Makoto Yabuuchi, Koji Nii, Yasumasa Tsukamoto, Shigeki Ohbayashi, Susumu Imaoka, Hiroshi Makino, Yoshinobu Yamagami, Satoshi Ishikura, Toshio Terano, Toshiyuki Oashi, Keiji Hashimoto, Akio Sebe, Gen Okazaki, Katsuji Satomi, Hironori Akamatsu, Hirofumi Shinohara:
A 45nm Low-Standby-Power Embedded SRAM with Improved Immunity Against Process and Temperature Variations. ISSCC 2007: 326-606 - [c1]Shigeki Ohbayashi, Makoto Yabuuchi, Kazushi Kono, Yuji Oda, Susumu Imaoka, Keiichi Usui, Toshiaki Yonezu, Takeshi Iwamoto, Koji Nii, Yasumasa Tsukamoto, Masashi Arakawa, Takahiro Uchida, Masakazu Okada, Atsushi Ishii, Hiroshi Makino, Koichiro Ishibashi, Hirofumi Shinohara:
A 65nm Embedded SRAM with Wafer-Level Burn-In Mode, Leak-Bit Redundancy and E-Trim Fuse for Known Good Die. ISSCC 2007: 488-617
Coauthor Index
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.
Unpaywalled article links
Add open access links from 
to the list of external document links (if available).
Privacy notice: By enabling the option above, your browser will contact the API of unpaywall.org to load hyperlinks to open access articles. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the Unpaywall privacy policy.
Archived links via Wayback Machine
For web page which are no longer available, try to retrieve content from the 
of the Internet Archive (if available).
Privacy notice: By enabling the option above, your browser will contact the API of archive.org to check for archived content of web pages that are no longer available. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the Internet Archive privacy policy.
Reference lists
Add a list of references from 
, 
, and 
to record detail pages.
load references from crossref.org and opencitations.net
Privacy notice: By enabling the option above, your browser will contact the APIs of crossref.org, opencitations.net, and semanticscholar.org to load article reference information. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the Crossref privacy policy and the OpenCitations privacy policy, as well as the AI2 Privacy Policy covering Semantic Scholar.
Citation data
Add a list of citing articles from and to record detail pages.
load citations from opencitations.net
Privacy notice: By enabling the option above, your browser will contact the API of opencitations.net and semanticscholar.org to load citation information. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the OpenCitations privacy policy as well as the AI2 Privacy Policy covering Semantic Scholar.
OpenAlex data
Load additional information about publications from 
.
Privacy notice: By enabling the option above, your browser will contact the API of openalex.org to load additional information. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the information given by OpenAlex.
last updated on 2024-10-18 20:29 CEST by the dblp team
all metadata released as open data under CC0 1.0 license
see also: Terms of Use | Privacy Policy | Imprint
dblp was originally created in 1993 at:
since 2018, dblp has been operated and maintained by:
the dblp computer science bibliography is funded and supported by:
