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Daniel H. Jung

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affiliation: Korea Advanced Institute of Science and Technology, Daejeon, South Korea

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2010 – 2019

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2016
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Manho Lee, Daniel H. Jung, Heegon Kim, Jonghyun Cho, Joungho Kim:
High-Frequency Temperature-Dependent Through-Silicon-Via (TSV) Model and High-Speed Channel Performance for 3-D ICs. IEEE Des. Test 33(2): 17-29 (2016)
2015
[c12]
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Sumin Choi, Heegon Kim, Daniel H. Jung, Jonghoon J. Kim, Jaemin Lim, Hyunsuk Lee, Kyungjun Cho, Joungho Kim, Hyungsoo Kim, Yong-Ju Kim, Yunsaing Kim:
Crosstalk-included eye-diagram estimation for high-speed silicon, organic, and glass interposer channels on 2.5D/3D IC. 3DIC 2015: TS8.25.1-TS8.25.5
[c11]
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Daniel H. Jung, Heegon Kim, Jonghoon J. Kim, Sukjin Kim, Joungho Kim, Hyun-Cheol Bae, Kwang-Seong Choi:
Modeling and analysis of defects in through silicon via channel for non-invasive fault isolation. 3DIC 2015: TS8.29.1-TS8.29.4
[c10]
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Jonghoon J. Kim, Daniel H. Jung, Heegon Kim, Sunkyu Kong, Sumin Choi, Jaemin Lim, Joungho Kim:
TSV-based current probing structure using magnetic coupling in 2.5D and 3D IC. EMC Compo 2015: 212-215
[c9]
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Jaemin Lim, Manho Lee, Daniel H. Jung, Jonghoon J. Kim, Sumin Choi, Hyunsuk Lee, Joungho Kim:
Shielding structures for through silicon via (TSV) to active circuit noise coupling in 3D IC. EMC Compo 2015: 248-251
2014
[c8]
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Daniel H. Jung, Heegon Kim, Jonghoon J. Kim, Sukjin Kim, Joungho Kim, Hyun-Cheol Bae, Kwang-Seong Choi:
Fault detection and isolation of multiple defects in through silicon via (TSV) channel. 3DIC 2014: 1-5
[c7]
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Jonghoon J. Kim, Bumhee Bae, Sukjin Kim, Sunkyu Kong, Heegon Kim, Daniel H. Jung, Joungho Kim:
Magnetically-coupled current probing structure consisting of TSVs and RDLs in 2.5D and 3D ICs. 3DIC 2014: 1-6
2013
[c6]
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Daniel H. Jung, Jonghyun Cho, Heegon Kim, Jonghoon J. Kim, Hongseok Kim, Joungho Kim, Hyun-Cheol Bae, Kwang-Seong Choi:
Fault isolation of short defect in through silicon via (TSV) based 3D-IC. 3DIC 2013: 1-4
[c5]
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Heegon Kim, Jonghyun Cho, Jonghoon J. Kim, Daniel H. Jung, Sumin Choi, Joungho Kim, Junho Lee, Kunwoo Park:
Eye-diagram simulation and analysis of a high-speed TSV-based channel. 3DIC 2013: 1-7
[c4]
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Jonghoon J. Kim, Heegon Kim, Sukjin Kim, Bumhee Bae, Daniel H. Jung, Sunkyu Kong, Joungho Kim, Junho Lee, Kunwoo Park:
Non-contact wafer-level TSV connectivity test methodology using magnetic coupling. 3DIC 2013: 1-4
[c3]
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Heegon Kim, Jonghyun Cho, Daniel H. Jung, Jonghoon J. Kim, Sumin Choi, Joungho Kim, Junho Lee, Kunwoo Park:
Design and measurement of a compact on-interposer passive equalizer for chip-to-chip high-speed differential signaling. EMC Compo 2013: 5-9
[c2]
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Jonghoon J. Kim, Heegon Kim, Sukjin Kim, Bumhee Bae, Daniel H. Jung, Sunkyu Kong, Joungho Kim, Junho Lee, Kunwoo Park:
Design of contactless wafer-level TSV connectivity testing structure using capacitive coupling. EMC Compo 2013: 158-162
[c1]
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Daniel H. Jung, Heegon Kim, Jonghoon J. Kim, Joungho Kim, Hyun-Cheol Bae, Kwang-Seong Choi:
Modeling and analysis of open defect in through silicon via (TSV) channel. EMC Compo 2013: 163-166

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